JPH0145989B2 - - Google Patents
Info
- Publication number
- JPH0145989B2 JPH0145989B2 JP58153671A JP15367183A JPH0145989B2 JP H0145989 B2 JPH0145989 B2 JP H0145989B2 JP 58153671 A JP58153671 A JP 58153671A JP 15367183 A JP15367183 A JP 15367183A JP H0145989 B2 JPH0145989 B2 JP H0145989B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- layer region
- photoconductive member
- member according
- atoms
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08214—Silicon-based
- G03G5/08221—Silicon-based comprising one or two silicon based layers
- G03G5/08228—Silicon-based comprising one or two silicon based layers at least one with varying composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08292—Germanium-based
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
- H10F30/15—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors comprising amorphous semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photoreceptors In Electrophotography (AREA)
- Light Receiving Elements (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58153671A JPS6045078A (ja) | 1983-08-23 | 1983-08-23 | 光導電部材 |
US06/641,737 US4569892A (en) | 1983-08-23 | 1984-08-17 | Photoconductive member with amorphous silicon germanium regions and containing oxygen |
DE19843430923 DE3430923A1 (de) | 1983-08-23 | 1984-08-22 | Fotoleitfaehiges aufzeichnungsmaterial |
FR8413085A FR2555819B1 (fr) | 1983-08-23 | 1984-08-22 | Element photoconducteur |
GB08421391A GB2148018B (en) | 1983-08-23 | 1984-08-23 | Photoconductive member |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58153671A JPS6045078A (ja) | 1983-08-23 | 1983-08-23 | 光導電部材 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6045078A JPS6045078A (ja) | 1985-03-11 |
JPH0145989B2 true JPH0145989B2 (en]) | 1989-10-05 |
Family
ID=15567624
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58153671A Granted JPS6045078A (ja) | 1983-08-23 | 1983-08-23 | 光導電部材 |
Country Status (5)
Country | Link |
---|---|
US (1) | US4569892A (en]) |
JP (1) | JPS6045078A (en]) |
DE (1) | DE3430923A1 (en]) |
FR (1) | FR2555819B1 (en]) |
GB (1) | GB2148018B (en]) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4565731A (en) * | 1978-05-04 | 1986-01-21 | Canon Kabushiki Kaisha | Image-forming member for electrophotography |
DE3610401A1 (de) * | 1985-03-28 | 1987-02-12 | Sumitomo Electric Industries | Halbleiterelement und verfahren zu dessen herstellung und gegenstand, in dem dieses element verwendet wird |
JPS63233897A (ja) * | 1987-03-23 | 1988-09-29 | 株式会社 中西硝子工芸社 | 装飾面の形成方法 |
JP4171428B2 (ja) * | 2003-03-20 | 2008-10-22 | 三洋電機株式会社 | 光起電力装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4471042A (en) * | 1978-05-04 | 1984-09-11 | Canon Kabushiki Kaisha | Image-forming member for electrophotography comprising hydrogenated amorphous matrix of silicon and/or germanium |
GB2095030B (en) * | 1981-01-08 | 1985-06-12 | Canon Kk | Photoconductive member |
JPS57172344A (en) * | 1981-04-17 | 1982-10-23 | Minolta Camera Co Ltd | Electrophotographic photorecepter |
US4490450A (en) * | 1982-03-31 | 1984-12-25 | Canon Kabushiki Kaisha | Photoconductive member |
-
1983
- 1983-08-23 JP JP58153671A patent/JPS6045078A/ja active Granted
-
1984
- 1984-08-17 US US06/641,737 patent/US4569892A/en not_active Expired - Lifetime
- 1984-08-22 DE DE19843430923 patent/DE3430923A1/de active Granted
- 1984-08-22 FR FR8413085A patent/FR2555819B1/fr not_active Expired
- 1984-08-23 GB GB08421391A patent/GB2148018B/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB2148018A (en) | 1985-05-22 |
GB2148018B (en) | 1987-01-28 |
GB8421391D0 (en) | 1984-09-26 |
FR2555819A1 (fr) | 1985-05-31 |
US4569892A (en) | 1986-02-11 |
DE3430923C2 (en]) | 1988-12-22 |
JPS6045078A (ja) | 1985-03-11 |
FR2555819B1 (fr) | 1987-02-06 |
DE3430923A1 (de) | 1985-03-14 |